Tuning skyrmions in B20 compounds by <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>4</mml:mn><mml:mi>d</mml:mi></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>5</mml:mn><mml:mi>d</mml:mi></mml:math> doping
نویسندگان
چکیده
Skyrmion stabilization in novel magnetic systems with the B20 crystal structure is reported here, primarily based on theoretical results. The focus effect of alloying $3d$ sublattice by substitution heavier $4d$ and $5d$ elements, ambition to tune spin-orbit coupling its influence interactions. State-of-the-art methods density functional theory are used calculate both isotropic anisotropic exchange Significant enhancement Dzyaloshinskii-Moriya interaction for $5d$-doped FeSi CoSi, accompanied a large modification spin stiffness spiralization. Micromagnetic simulations coupled atomistic spin-dynamics ab initio interactions reveal spin-spiral nature ground state field-induced skyrmions all these systems. Especially small $\ensuremath{\sim}50\phantom{\rule{0.16em}{0ex}}\mathrm{nm}$ predicted ${\mathrm{Co}}_{0.75}{\mathrm{Os}}_{0.25}\mathrm{Si}$, compared $\ensuremath{\sim}148\phantom{\rule{0.16em}{0ex}}\mathrm{nm}$ ${\mathrm{Fe}}_{0.75}{\mathrm{Co}}_{0.25}\mathrm{Si}$. Convex-hull analysis suggests that compounds considered here structurally stable at elevated temperatures should be possible synthesize. This prediction confirmed experimentally synthesis structural Ru-doped CoSi discussed powder single-crystal forms.
منابع مشابه
Tuning the layer-dependent doping effect of graphenes by C60.
In this work, the doping of n-layer graphenes with C60 is investigated via Raman spectroscopy. The results indicate that C60 can induce hole doping in graphenes, and that the doping level is closely related to the layer number of the graphenes. Moreover, the level of doping in the hybrid of C60 on graphene (C60/G) is more significant than that in the hybrid of graphene on C60 (G/C60).
متن کاملRole of Ag doping in Ba8Si46 compounds
N. Kamakura,1 T. Nakano,2 Y. Ikemoto,3 M. Usuda,4 H. Fukuoka,5 S. Yamanaka,5,6 S. Shin,1 and K. Kobayashi3 1Soft X-ray Spectroscopy Laboratory, RIKEN/SPring-8, Mikazuki, Hyogo 679-5148, Japan 2Department of Physics, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan 3JASRI/SPring-8 Mikazuki, Hyogo 679-5198, Japan 4JAERI/SPring-8 Mikazuki, Hyogo 679-5198, Japan 5Depart...
متن کاملTuning NaYF4 Nanoparticles through Alkaline Earth Doping
Phase and size of lanthanide-doped nanoparticles are the most important characteristics that dictate optical properties of these nanoparticles and affect their technological applications. Herein, we present a systematic study to examine the effect of alkaline earth doping on the formation of NaYF₄ upconversion nanoparticles. We show that alkaline earth doping has a dual function of tuning parti...
متن کاملsynthesis of 3-aryl-2h-benzo[b]-1,4-oxazines in [omim]bf4 and reduction of organic compounds in methylimidazolium formate
در این پروژه ترکیبات 3-آریل-2h-بنزو[b]-4،1-اکسازین ها از مواد اولیه تجاری مشتقات دو آمینو فنول و ?-هالو کتون های آروماتیک در مایع یونی 1-اکتیل-3-متیل ایمیدازولیوم تترا فلورو بورات([omim]bf4) سنتز شده است. این واکنش توسط باز پتاسیم کربنات محلول از طریق o-آلکیلاسیون و سپس یک واکنش آمیداسیون درون مولکولی خود بخود در مدت زمان کوتاه انجام می شود. ترکیبات 4،1-بنزوکسازین به این روش با بهره خوب تا آلی ...
15 صفحه اولDoping Limits in Ii-vl Compounds -challenges, Problems and Solutions
Wide-band-gap II-VI semiconductors have a potential for a variety of applications especially in the areas of light-emitting and light-detecting devices, photovoltaic conversion (solar cells), X-ray and "t--ray detection, etc. In all applications, a good bipolar electrical conduction, i.e. efficient doping from both nand p-side is essential, but due to the reasons which are not yet fully underst...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Materials
سال: 2022
ISSN: ['2476-0455', '2475-9953']
DOI: https://doi.org/10.1103/physrevmaterials.6.084401